Title :
Poly I2L - A high-speed linear compatible structure
Author :
Davies, R. ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Keywords :
Chemical technology; Clamps; Conductivity; Degradation; Diodes; Doping; Epitaxial growth; Physics; Silicon; Solid state circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155731
