DocumentCode :
2864009
Title :
High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process
Author :
Campbell, Charles F. ; Kao, Ming-Yih ; Nayak, Sabyasachi
Author_Institution :
TriQuint Semiconductor, Defense Products and Foundry Services, 500 West Renner Rd., Richardson, TX, USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15µm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage amplifiers demonstrates 8–9W of output power for the balanced MMIC and 4.5–6W for the single-ended configuration. The associated power added (PAE) efficiency of both amplifiers exceeds 25% at Ka-band. The die sizes for the balanced and single-ended MMICs are 2.55×3.80mm2 and 1.39×3.42mm2 respectively.
Keywords :
FETs; Gallium arsenide; Gallium nitride; MMICs; Power amplifiers; Power generation; Power measurement; Gallium Nitride; MMIC; millimeter wave; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259444
Filename :
6259444
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2864009
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