Layout-dependent effects on high frequency performance and noise of sub-40nm multi-finger n-channel and p-channel MOSFETs

Layout dependent effects on high frequency performance parameters like fT, fMAX, and RF noise in sub-40nm multi-finger MOSFETs is investigated in this paper. Narrow-OD MOSFET with smaller finger width and larger finger number can achieve lower Rg and higher fMAX. However, these narrow-OD devices suffer fT degradation and higher noise figure, even with the advantage of lower Rg. The mechanisms responsible for the trade-off between different parameters will be presented to provide an important guideline of device layout for RF circuits design using nanoscale CMOS technology.