DocumentCode :
2864097
Title :
Ka-band InP HEMT MMIC reliability
Author :
Paine, Bruce ; Wong, Richard ; Schmitz, Adele ; Walden, Robert ; Nguyen, Loi ; Delaney, Michael ; Hum, Kenny
Author_Institution :
Boeing Satellite Syst. Inc., El Segundo, CA, USA
fYear :
2000
fDate :
2000
Firstpage :
21
Lastpage :
44
Abstract :
We report on reliability tests on InP HEMT MMICs by two approaches. First we describe elevated-temperature lifetests on Ka-band LNA MMICs, for studying all thermally-driven degradation mechanisms. Then we describe ramped-voltage studies of separate capacitors, for measuring time-dependent dielectric breakdown (TDDB), which is accelerated mostly by elevated voltage
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MMIC; indium compounds; integrated circuit reliability; InP; InP HEMT MMIC; Ka-band LNA; capacitor; elevated temperature life testing; ramped voltage; reliability; thermal degradation; time dependent dielectric breakdown; Acceleration; Breakdown voltage; Capacitors; Dielectric breakdown; Dielectric measurements; HEMTs; Indium phosphide; MMICs; Testing; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
Type :
conf
DOI :
10.1109/GAASRW.2000.902417
Filename :
902417
Link To Document :
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