DocumentCode
2864097
Title
Ka-band InP HEMT MMIC reliability
Author
Paine, Bruce ; Wong, Richard ; Schmitz, Adele ; Walden, Robert ; Nguyen, Loi ; Delaney, Michael ; Hum, Kenny
Author_Institution
Boeing Satellite Syst. Inc., El Segundo, CA, USA
fYear
2000
fDate
2000
Firstpage
21
Lastpage
44
Abstract
We report on reliability tests on InP HEMT MMICs by two approaches. First we describe elevated-temperature lifetests on Ka-band LNA MMICs, for studying all thermally-driven degradation mechanisms. Then we describe ramped-voltage studies of separate capacitors, for measuring time-dependent dielectric breakdown (TDDB), which is accelerated mostly by elevated voltage
Keywords
HEMT integrated circuits; III-V semiconductors; field effect MMIC; indium compounds; integrated circuit reliability; InP; InP HEMT MMIC; Ka-band LNA; capacitor; elevated temperature life testing; ramped voltage; reliability; thermal degradation; time dependent dielectric breakdown; Acceleration; Breakdown voltage; Capacitors; Dielectric breakdown; Dielectric measurements; HEMTs; Indium phosphide; MMICs; Testing; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location
Seattle, WA
Print_ISBN
0-7908-0102-7
Type
conf
DOI
10.1109/GAASRW.2000.902417
Filename
902417
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