• DocumentCode
    2864110
  • Title

    Life testing and failure analysis of PHEMT MMICs

  • Author

    Anderson, W.T. ; Roussos, J.A. ; Mittereder, J.A.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    45
  • Lastpage
    52
  • Abstract
    Accelerated high temperature RF life testing was used to investigate the reliability of two-stage GaAs MMIC power amplifiers based on 0.25 m PHEMT technology. Life testing was performed at elevated baseplate temperatures with MMICs operating at typical DC bias conditions and large signal RF drive levels of two dB compression. The resulting failure distribution was log normal and the estimated median life time extrapolated to a channel temperature of 140 C was 2.3x106 hours with an activation energy of 1.1 eV
  • Keywords
    MMIC power amplifiers; failure analysis; gallium arsenide; life testing; power HEMT; semiconductor device reliability; GaAs; HEMT MMIC; accelerated high temperature RF life testing; activation energy; channel temperature; failure analysis; failure distribution; median life time; reliability; two-stage GaAs MMIC power amplifiers; Failure analysis; Gallium arsenide; High power amplifiers; Life estimation; Life testing; MMICs; PHEMTs; Radio frequency; Radiofrequency amplifiers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs Reliability Workshop, 2000. Proceedings
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7908-0102-7
  • Type

    conf

  • DOI
    10.1109/GAASRW.2000.902418
  • Filename
    902418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864110