Title :
Life testing and failure analysis of PHEMT MMICs
Author :
Anderson, W.T. ; Roussos, J.A. ; Mittereder, J.A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Accelerated high temperature RF life testing was used to investigate the reliability of two-stage GaAs MMIC power amplifiers based on 0.25 m PHEMT technology. Life testing was performed at elevated baseplate temperatures with MMICs operating at typical DC bias conditions and large signal RF drive levels of two dB compression. The resulting failure distribution was log normal and the estimated median life time extrapolated to a channel temperature of 140 C was 2.3x106 hours with an activation energy of 1.1 eV
Keywords :
MMIC power amplifiers; failure analysis; gallium arsenide; life testing; power HEMT; semiconductor device reliability; GaAs; HEMT MMIC; accelerated high temperature RF life testing; activation energy; channel temperature; failure analysis; failure distribution; median life time; reliability; two-stage GaAs MMIC power amplifiers; Failure analysis; Gallium arsenide; High power amplifiers; Life estimation; Life testing; MMICs; PHEMTs; Radio frequency; Radiofrequency amplifiers; Temperature;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902418
