• DocumentCode
    2864216
  • Title

    Volume and quality impacts on reliability: a new game for GaAs

  • Author

    Roesch, William J.

  • Author_Institution
    TriQuint Semicond. Inc., Beaverton, OR, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    137
  • Lastpage
    145
  • Abstract
    This work advances the knowledge of GaAs reliability by showing high temperature lifetesting is NOT the only game in town. Other accelerated tests are more effective in generating failures-especially failures that are likely to occur in typical use conditions. This work also demonstrates that emphasis on volume and quality aspects of semiconductor manufacturing will result in improved reliability results. Communication with high volume customers and larger sample sizes are offered as methods for finding "real" failure mechanisms
  • Keywords
    III-V semiconductors; failure analysis; gallium arsenide; life testing; semiconductor device reliability; semiconductor device testing; GaAs; GaAs reliability; accelerated testing; failure mechanism; high temperature life testing; quality metric; semiconductor manufacturing; volume production; Accelerated aging; Acceleration; Chemicals; Failure analysis; Gallium arsenide; Life estimation; Life testing; Manufacturing; Standardization; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs Reliability Workshop, 2000. Proceedings
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7908-0102-7
  • Type

    conf

  • DOI
    10.1109/GAASRW.2000.902426
  • Filename
    902426