DocumentCode
2864216
Title
Volume and quality impacts on reliability: a new game for GaAs
Author
Roesch, William J.
Author_Institution
TriQuint Semicond. Inc., Beaverton, OR, USA
fYear
2000
fDate
2000
Firstpage
137
Lastpage
145
Abstract
This work advances the knowledge of GaAs reliability by showing high temperature lifetesting is NOT the only game in town. Other accelerated tests are more effective in generating failures-especially failures that are likely to occur in typical use conditions. This work also demonstrates that emphasis on volume and quality aspects of semiconductor manufacturing will result in improved reliability results. Communication with high volume customers and larger sample sizes are offered as methods for finding "real" failure mechanisms
Keywords
III-V semiconductors; failure analysis; gallium arsenide; life testing; semiconductor device reliability; semiconductor device testing; GaAs; GaAs reliability; accelerated testing; failure mechanism; high temperature life testing; quality metric; semiconductor manufacturing; volume production; Accelerated aging; Acceleration; Chemicals; Failure analysis; Gallium arsenide; Life estimation; Life testing; Manufacturing; Standardization; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location
Seattle, WA
Print_ISBN
0-7908-0102-7
Type
conf
DOI
10.1109/GAASRW.2000.902426
Filename
902426
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