DocumentCode :
2864216
Title :
Volume and quality impacts on reliability: a new game for GaAs
Author :
Roesch, William J.
Author_Institution :
TriQuint Semicond. Inc., Beaverton, OR, USA
fYear :
2000
fDate :
2000
Firstpage :
137
Lastpage :
145
Abstract :
This work advances the knowledge of GaAs reliability by showing high temperature lifetesting is NOT the only game in town. Other accelerated tests are more effective in generating failures-especially failures that are likely to occur in typical use conditions. This work also demonstrates that emphasis on volume and quality aspects of semiconductor manufacturing will result in improved reliability results. Communication with high volume customers and larger sample sizes are offered as methods for finding "real" failure mechanisms
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; life testing; semiconductor device reliability; semiconductor device testing; GaAs; GaAs reliability; accelerated testing; failure mechanism; high temperature life testing; quality metric; semiconductor manufacturing; volume production; Accelerated aging; Acceleration; Chemicals; Failure analysis; Gallium arsenide; Life estimation; Life testing; Manufacturing; Standardization; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
Type :
conf
DOI :
10.1109/GAASRW.2000.902426
Filename :
902426
Link To Document :
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