High aspect ratio inductively coupled plasma (ICP) etching of InP/InGaAsP/AlGaInAs using Cl2/Ar/N2 gas mixture

Author

Dylewicz, R. ; Bryce, A.C. ; Sorel, M. ; De La Rue, R.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this paper we report the optimization of an ICP dry etching process for the fabrication of submicron-sized features in a range of InP-based materials. High-resolution, deep (> 3.0 mum) dry etching is desirable for fabrication of distributed Bragg reflectors (DBRs) and chirped gratings, especially in ridge waveguide lasers.

Keywords

III-V semiconductors; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; laser beam etching; optimisation; ridge waveguides; waveguide lasers; ICP dry etching; InP-InGaAsP-AlGaInAs; chirped gratings; distributed Bragg reflectors; gas mixture; inductively coupled plasma dry etching; optimization; ridge waveguide lasers; submicron-sized features; Bragg gratings; Chirp; Distributed Bragg reflectors; Dry etching; Indium phosphide; Optical device fabrication; Optical materials; Plasma applications; Plasma materials processing; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5196446

Filename

5196446