Title :
High aspect ratio inductively coupled plasma (ICP) etching of InP/InGaAsP/AlGaInAs using Cl2/Ar/N2 gas mixture
Author :
Dylewicz, R. ; Bryce, A.C. ; Sorel, M. ; De La Rue, R.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
In this paper we report the optimization of an ICP dry etching process for the fabrication of submicron-sized features in a range of InP-based materials. High-resolution, deep (> 3.0 mum) dry etching is desirable for fabrication of distributed Bragg reflectors (DBRs) and chirped gratings, especially in ridge waveguide lasers.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; laser beam etching; optimisation; ridge waveguides; waveguide lasers; ICP dry etching; InP-InGaAsP-AlGaInAs; chirped gratings; distributed Bragg reflectors; gas mixture; inductively coupled plasma dry etching; optimization; ridge waveguide lasers; submicron-sized features; Bragg gratings; Chirp; Distributed Bragg reflectors; Dry etching; Indium phosphide; Optical device fabrication; Optical materials; Plasma applications; Plasma materials processing; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5196446
