DocumentCode :
2864518
Title :
E2-PROM TV synthesizer
Author :
Berenga, F. ; Daniele, V. ; Ferla, G. ; Torelli, Guido ; Mienner, W. ; Haraszti, I. ; Sieber, Peter
Author_Institution :
SGS-ATES Electronic Components, Agrate Brianza, Italy
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
196
Lastpage :
197
Abstract :
A nonvolatile memory cell using two polysilicon layers and a single-polarity supply, affording safe operation above 104write-erase cycles, will be described. A TV tuning circuit, implementing logic and memory on the same device, has been realized.
Keywords :
Automatic control; Circuit optimization; Electrodes; Nonvolatile memory; Read only memory; Silicon; Synthesizers; TV; Threshold voltage; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155768
Filename :
1155768
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2864518
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