Title :
A 60 GHz BiFET constructive wave power amplifier
Author :
Kijsanayotin, Tissana ; Buckwalter, James F.
Author_Institution :
Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, USA 92093
Abstract :
A V-band BiFET Constructive Wave Power Amplifier (BiFET CWPA) is presented that allows for a graceful degradation in operation. The four-stage amplifier operates from 52–62 GHz with a peak small-signal gain of 10.7 dB at 60 GHz. Peak output saturation power (Psat) is 16.4 dBm with associated power-added efficiency (PAE) of 15.3%. The amplifier nominally consumes 52 mW (4 V × 0.13 mA) and the active area occupies only 0.074 mm2 of die space.
Keywords :
Feedback circuits; Gain; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power transmission lines; Silicon germanium; 60 GHz; BiFET; SiGe-BiCMOS; millimeter-wave; power amplifier; traveling-wave amplifier;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259476
