DocumentCode :
2864737
Title :
Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker
Author :
Urciuoli, D.P. ; Veliadis, Victor ; Ha, H.C. ; Lubomirsky, Vadim
Author_Institution :
U.S. Army Res. Lab., Adelphi, MD, USA
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
354
Lastpage :
358
Abstract :
Bidirectional solid-state circuit breakers (BDSSCBs) can replace mechanical fault protection devices in systems having bidirectional current flow through a single bus, for increased transition speed, functionality, and reliability. Silicon carbide, 1200-V, 0.1-cm2 JFETs were designed and fabricated for the BDSSCB application. A novel BDSSCB gate driver was developed for both self-triggered temperature-compensated over-current protection, and external triggering. Bidirectional 600-V, 60-A fault isolation was demonstrated in a transition time of approximately 10 μs with two packaged JFET modules, a bidirectional RCD snubber, and a series distribution bus inductance of 20 μH.
Keywords :
junction gate field effect transistors; overcurrent protection; residual current devices; silicon compounds; BDSSCB gate driver; JFET modules; SiC; bidirectional RCD snubber; bidirectional solid-state circuit breakers; current 60 A; external triggering; self-triggered temperature-compensated overcurrent protection; voltage 1200 V; voltage 600 V; Circuit faults; Driver circuits; Inductance; JFETs; Logic gates; Silicon carbide; Snubbers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744620
Filename :
5744620
Link To Document :
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