DocumentCode :
2864780
Title :
P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification
Author :
Li, Shengnan ; Tolbert, Leon M. ; Wang, Fred ; Peng, Fang Zheng
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Tennessee, Knoxville, TN, USA
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
372
Lastpage :
378
Abstract :
This paper proposes a novel packaging method for power electronics modules based on the concepts of P-cell and N-cell. It can reduce the stray inductance in the current commutation path in a phase-leg module and hence improve the switching behavior. Two IGBT phase-leg modules, specifically a P-cell and N-cell based module and a conventional module are designed. Using Ansoft Q3D Extractor, electromagnetic simulation is carried out to extract the stray inductance from the two modules. Switching behavior with different package parasitics is studied based on Saber simulation. Two prototype phase-leg modules based on two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. The measurement results agree with the simulation very well.
Keywords :
electromagnetic interference; modules; power electronics; power semiconductor switches; printed circuit layout; IGBT module; Q3D extractor; electromagnetic simulation; experimental verification; layout design; packaging method; parasitic extraction; power electronics modules; switching behavior; Inductance; Insulated gate bipolar transistors; Layout; Multichip modules; Substrates; Switches; Wires; IGBT; N-cell; P-cell; commutation loop; phase-leg module; stray inductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744623
Filename :
5744623
Link To Document :
بازگشت