Title :
Use of SiO2 nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher
Author :
Wang, Ding-shin ; Chao, Jiun-Jie ; Lin, Ching-Fuh
Author_Institution :
Grad. Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Large-area GaAs nanowires are fabricated by using SiO2 nanoparticles as a mask. SiO2 nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by induced-coupled plasma reactive ion etcher.
Keywords :
III-V semiconductors; gallium arsenide; monolayers; nanofabrication; nanoparticles; nanowires; semiconductor quantum wires; silicon compounds; spin coating; sputter etching; GaAs; SiO2; SiO2 nanoparticles; etch mask; induced-coupled plasma reactive ion etcher; large-area nanowires; nanoparticle monolayer; spin coating; Chemical lasers; Chemical vapor deposition; Etching; Gallium arsenide; Methanol; Nanoparticles; Nanowires; Plasma applications; Scanning electron microscopy; Substrates;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5196467
