• DocumentCode
    2864829
  • Title

    Use of SiO2 nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher

  • Author

    Wang, Ding-shin ; Chao, Jiun-Jie ; Lin, Ching-Fuh

  • Author_Institution
    Grad. Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2009
  • fDate
    14-19 June 2009
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Large-area GaAs nanowires are fabricated by using SiO2 nanoparticles as a mask. SiO2 nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by induced-coupled plasma reactive ion etcher.
  • Keywords
    III-V semiconductors; gallium arsenide; monolayers; nanofabrication; nanoparticles; nanowires; semiconductor quantum wires; silicon compounds; spin coating; sputter etching; GaAs; SiO2; SiO2 nanoparticles; etch mask; induced-coupled plasma reactive ion etcher; large-area nanowires; nanoparticle monolayer; spin coating; Chemical lasers; Chemical vapor deposition; Etching; Gallium arsenide; Methanol; Nanoparticles; Nanowires; Plasma applications; Scanning electron microscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-4079-5
  • Electronic_ISBN
    978-1-4244-4080-1
  • Type

    conf

  • DOI
    10.1109/CLEOE-EQEC.2009.5196467
  • Filename
    5196467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864829