DocumentCode
2864835
Title
Design of low phase noise LC VCO using asymmetric inductance tank and HNFF technology in InGaP/GaAs HBT process
Author
Wang, Cong ; Kim, Nam-Young
Author_Institution
Kwangwoon University, Seoul, 139-701, Korea
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
A harmonic noise frequency filtering (HNFF) LC voltage-controlled oscillator (VCO) is fabricated using asymmetric inductance tank (AIT) in InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. In order to optimize phase noise, the AIT and HNFF techniques are presented. The proposed VCO exhibited the phase noise of −117.3 dBc/Hz and −129.96 dBc/Hz at 100 kHz and 1 MHz offset frequencies and a tuning range from 1.46 GHz to 1.721 GHz. The total on-chip LC VCO is implanted in 0.85 × 0.85 mm2 chip area.
Keywords
Capacitors; Frequency conversion; Gallium arsenide; Noise; Radio frequency; Switches; Voltage-controlled oscillators; Harmonic noise frequency filtering (HNFF); asymmetric inductance tank (AIT); heterojunction bipolar transistor (HBT); monolithic microwave integrated circuit (MMIC); voltage-controlled oscillator (VCO);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259493
Filename
6259493
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