DocumentCode
2864841
Title
Gigabit-rate GaAs FET RF phase modulators
Author
Dobratz, B. ; Ho, N. ; Lee, Gene ; Suyematsu, H.
Author_Institution
Hughes Aircraft Company, Los Angeles, CA, USA
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
76
Lastpage
77
Abstract
Microwave biphase modulators in the 4-16GHz range using a GaAs FET as the switching element will be discussed. Key features are multigigabit data rates and very low dc power consumption.
Keywords
Amplitude modulation; Contacts; Driver circuits; Gallium arsenide; Impedance; Microwave FETs; Phase modulation; Radio frequency; Reflection; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155786
Filename
1155786
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