DocumentCode
2864974
Title
Comprehensive thermal analysis of pulsed GaAs HPAs for lifetime estimation
Author
Pomeroy, James W. ; Bernardoni, Mirko ; Craig, David M. ; Morrison, Graeme D. ; Wilkinson, Bruce ; Kuball, Martin
Author_Institution
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, BS8 1TL, United Kingdom
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
In pulsed applications, such as radar, estimates of FET channel temperature based on time-averaged modeling are inaccurate; the analysis must be done dynamically. A thermal model of an X-band power amplifier is constructed and validated against direct measurements by time-resolved Raman thermography, complemented by laser thermo-reflectance and infrared imaging. The consequences for radar system design are discussed, including the impact of RF drive on channel temperatures. A comparison of device lifetime based on instantaneous and time-average channel temperature is presented.
Keywords
Gallium arsenide; Laser radar; Measurement by laser beam; Radio frequency; Temperature measurement; Transient analysis; Airborne radar; HEMTs; MMICs; Raman scattering; electronics cooling; reliability; thermal analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259500
Filename
6259500
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