DocumentCode
2864976
Title
40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method
Author
Sedighi, Behnam ; Scheytt, J. Christoph
Author_Institution
NICTA, University of Melbourne, VIC 3010, Australia
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
Design of a 40 Gb/s VCSEL driver IC capable of providing up to 10mA current to common-cathode VCSELs is presented. Using low-power bandwidth enhancement techniques, a prototype IC is successfully developed in 180-GHz SiGe BiCMOS technology. Measured results show 34 GHz of bandwidth, open eye diagram with rise/fall time below 10 ps, and power dissipation of 130 mW.
Keywords
Bandwidth; BiCMOS integrated circuits; Capacitance; Inductors; Modulation; Vertical cavity surface emitting lasers; Integrated circuit; Laser driver; amplifier; peaking; wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259501
Filename
6259501
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