• DocumentCode
    2864983
  • Title

    Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing

  • Author

    Sedighi, Behnam ; Ostrovskyy, Pylyp ; Scheytt, J. Christoph

  • Author_Institution
    NICTA, University of Melbourne, VIC 3010, Australia
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    this paper investigates low-power design of high-speed and high-swing electronic driver circuits. A method to estimate and optimize the power consumption of such driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe BiCMOS process and an output swing of 2.5 Vpp is measured. The driver consumes 0.75 W from 5 V supply.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; Capacitance; Driver circuits; Power demand; Silicon germanium; Transistors; breakdown voltage; driver; emitter-follower; inductive peaking; jitter; overshoot;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259502
  • Filename
    6259502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864983