Microwave and millimeter wave power amplifiers: Technology, applications, benchmarks, and future trends

Author

Komiak, James J.

Author_Institution

Global Eng., BAE Syst. Electron. Syst., Nashua, NH, USA

fYear

2015

fDate

25-28 Jan. 2015

Firstpage

23

Lastpage

25

Abstract

Solid State Transistor Device Technology is ubiquitous in communications, radar, electronic warfare, and instrumentation applications. This abridged presentation will cover Si LDMOS, PHEMT, InP HEMT/MHEMT and GaN HEMT. Content includes principles of operation, structures, characteristics, classes of operation, and device state of the art benchmarks. The art of power amplifier design is approached from a historical perspective. Power amplifiers utilizing these device technologies covering UHF through sub-millimeter wave are described including amplifier state of the art benchmarks. Future trends are highlighted and summarized.

Keywords

III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; indium compounds; microwave power amplifiers; millimetre wave power amplifiers; silicon; wide band gap semiconductors; GaN; InP; LDMOS; MHEMT; PHEMT; Si; communications; device technologies; electronic warfare; instrumentation applications; microwave power amplifiers; millimeter wave power amplifiers; radar; solid state transistor device technology; Benchmark testing; Gallium nitride; HEMTs; Integrated circuit modeling; MMICs; Power amplifiers; Solid modeling; microwave; millimeter wave; power amplifier; solid state;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2015 IEEE

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/RWS.2015.7129767

Filename

7129767