Title :
Performance limits of GaAs microwave FETs
Author :
Cohen, Emmanuel ; Narayan, S.
Author_Institution :
Naval Research Laboratory, Washington, DC, USA
Abstract :
The performance limits of low noise and power of FETs will be discussed. Topics will include frequency limits, optimum device cell design for wideband power FETs and novel circuit techniques. The role of materials extending the power and frequency performance of FETs will also be reviewed.
Keywords :
Fabrication; Frequency; Gallium arsenide; Laboratories; Microwave FETs; Microwave devices; Noise figure; Power generation; Solid state circuits; Temperature;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155806
