• DocumentCode
    2865182
  • Title

    Performance limits of GaAs microwave FETs

  • Author

    Cohen, Emmanuel ; Narayan, S.

  • Author_Institution
    Naval Research Laboratory, Washington, DC, USA
  • Volume
    XXI
  • fYear
    1978
  • fDate
    15-17 Feb. 1978
  • Firstpage
    193
  • Lastpage
    193
  • Abstract
    The performance limits of low noise and power of FETs will be discussed. Topics will include frequency limits, optimum device cell design for wideband power FETs and novel circuit techniques. The role of materials extending the power and frequency performance of FETs will also be reviewed.
  • Keywords
    Fabrication; Frequency; Gallium arsenide; Laboratories; Microwave FETs; Microwave devices; Noise figure; Power generation; Solid state circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1978.1155806
  • Filename
    1155806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2865182