DocumentCode :
2865223
Title :
Ultra broad band CMOS balanced amplifiers using quadrature power splitters on glass integrated passive device (GIPD) and LTCC with flip chip interconnects for SiP integration
Author :
Lu, Hsin-Chia ; Kuo, Che-Chung ; Wei, Shuan-An ; Huang, Po-Sheng ; Wang, Huei
Author_Institution :
Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, 106, Taiwan. R.O.C.
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
Two balance amplifiers operating at 2.5∼12-GHz with 1dB gain flatness and under 10 dB return loss are presented. Low loss broadband quadrature power splitters for BAs are realized on glass integrated passive device (GIPD) and low temperature cofired ceramic (LTCC). For 0.18-µm CMOS unit amplifier in BA, output matching network based on 3rd order band pass filter is used for optimum output power and good return loss. These BAs demonstrate widest bandwidth with smallest gain variation among power amplifiers under 15 GHz, and highest ratio of OP1dB to power stage transistor size is achieved on CMOS process.
Keywords :
Bandwidth; Barium; Broadband amplifiers; CMOS integrated circuits; Gain; Power amplifiers; LTCC; QPS; balanced amplifier; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259513
Filename :
6259513
Link To Document :
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