DocumentCode :
2865324
Title :
Punch-through MOSFET for high-speed logic
Author :
Nakamura, T. ; Yamamoto, Manabu ; Ishikawa, Hiroshi ; Shinoda, M.
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
22
Lastpage :
23
Abstract :
This paper will describe punch-through mode operation of a submicron gate MOSFET for high-speed and low-power logic ICs. Switching delays of 90ps and minimum power-delay products of 2fJ have been obtained with ring oscillators.
Keywords :
Computer simulation; Delay; Electron devices; Inverters; Logic; MOSFET circuits; Ring oscillators; Switching circuits; Voltage control; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155814
Filename :
1155814
Link To Document :
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