Title :
Punch-through cell for dense bipolar ROMs
Author :
Lohstroh, J. ; Slob, A.
Author_Institution :
Philips Research Laboratory, Eindhoven, Netherlands
Abstract :
The punch-through effect, affording fast ROM cells, with projected areas of 250 μm2and smaller - down to 100 μm2- will be discussed. Using the CDI process, cells with selection and detection can be integrated on the same chip.
Keywords :
Bipolar transistors; Doping; Epitaxial layers; Laboratories; Prototypes; Read only memory; Schottky diodes; Semiconductor device measurement; Substrates; Symmetric matrices;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155816
