• DocumentCode
    2865362
  • Title

    Large high density CID imagers

  • Author

    Brown, D. ; Ghezzo, M. ; Sargent, P.

  • Author_Institution
    General Electric Research/Development Center, Schenectady, NY, USA
  • Volume
    XXI
  • fYear
    1978
  • fDate
    15-17 Feb. 1978
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    This paper will discuss the fabrication and performance of large (16K, 60K and 78K cells), high density CID self-scanned imager arrays. Small (1.2 × 1.2 mils) overlapping electrode cells using first level polysilicon electrode lines and second level polysilicon or antimony tin oxide electrode lines were utilized.
  • Keywords
    Capacitance; Circuits; Clocks; Dielectric loss measurement; Electrodes; Etching; Logic arrays; MOSFETs; Metallization; Thermal factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1978.1155817
  • Filename
    1155817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2865362