DocumentCode
2865538
Title
Hole character and photon polarization switching in quantum dot-in-dots and Quantum Dot Molecules
Author
Troncale, Valentina ; Kapon, Eli ; Karlsson, Karl Fredrik
Author_Institution
Lab. of Phys. of Nanostruct. (LPN), Ecole Polytech. Fed. de Lausanne (EPFL), Ecublens, Switzerland
fYear
2009
fDate
14-19 June 2009
Firstpage
1
Lastpage
1
Abstract
This study proposes and theoretically demonstrates dynamic switching of hole-character and polarization induced by applying an electric field on pyramidal GaAs/AlGaAs dot-in-dots (DiDs) and AlGaAs quantum dot molecules (QDMs). Results show that it is possible to separately confine the electron state and the hole states such that the holes are confined in thinner low-potential regions. The electric fields required for such switching are then calculated for a variety of DiD and QDM configurations, showing that realistic values of less than 105 V/cm are sufficient for inducing the switching. The fabrication of such structures are also discussed.
Keywords
III-V semiconductors; aluminium compounds; electro-optical switches; gallium arsenide; gallium compounds; light polarisation; nanofabrication; semiconductor growth; semiconductor quantum dots; valence bands; AlGaAs; GaAs-AlGaAs; dynamic switching; electron state confinement; hole character; hole state confinement; photon polarization switching; quantum dot molecules; quantum dot-in-dots; structure fabrication; valence band mixing; Gallium arsenide; Geometry; Laboratories; Materials science and technology; Optical polarization; Physics; Potential well; Quantum dots; Semiconductor nanostructures; Stationary state;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-4079-5
Electronic_ISBN
978-1-4244-4080-1
Type
conf
DOI
10.1109/CLEOE-EQEC.2009.5196501
Filename
5196501
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