Title :
Broadband HBT amplifiers
Author :
Krishnan, S. ; Mensa, D. ; Jaganathan, S. ; Mathew, T. ; Wei, Y. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier
Keywords :
III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 11.5 dB; 18 dB; 50 GHz; 8.2 dB; 80 GHz; AlInAs-GaInAs; AlInAs/GaInAs transferred-substrate heterojunction bipolar transistor; broadband HBT amplifier; distributed amplifier; gain-bandwidth product; lumped amplifier; single-stage amplifier; Bandwidth; Broadband amplifiers; Capacitance; Distributed amplifiers; Gain; Geometry; Heterojunction bipolar transistors; Mirrors; Transconductance; Wideband;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902510
