Title :
A MOS-controlled triac device
Author :
Scharf, B. ; Plummer, James
Author_Institution :
Stanford University, Satanford, CA, USA
Abstract :
A merged device - an insulated-gate triac - has been developed and modeled for analysis and design using a circuit analysis program combining MOS and bipolar capabilities. Applications include crosspoint switches, power control and microprocessor interface.
Keywords :
Anodes; Cathodes; Circuits; DH-HEMTs; MOSFETs; Resistors; Solid modeling; Switches; Threshold voltage; Thyristors;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155837
