Fabrication and characterization of RTD-HBT inverter

Author

Lin, C.-H. ; Yang, K. ; Gonza´lez, A.F. ; East, J.R. ; Mazumder, P. ; Haddad, G.I. ; Chow, D.H. ; Warren, L.D. ; Dunlap, H.L. ; Roth, J.A. ; Thomas, S., III

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2000

fDate

2000

Firstpage

42

Lastpage

43

Abstract

We report on the first thorough study of InP-based static inverters using RTD/HBT monolithic integration technology. RTD-based logic circuits have been widely studied because of their abilities to achieve high-speed operations and reduce circuit complexity. In this paper, we investigate a static inverter in order to explore RTD-based logic circuit behavior. Studies on output characteristics and power dissipation at high frequencies are included. In order to determine the maximum operating speed of the inverters, ring oscillators based on three stages of static inverters have been fabricated and measured

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; invertors; logic circuits; monolithic integrated circuits; resonant tunnelling diodes; InP; RTD-HBT inverter; high-speed operations; logic circuits; monolithic integration; output characteristics; power dissipation; ring oscillators; static inverters; Complexity theory; Fabrication; Frequency; Heterojunction bipolar transistors; Inverters; Logic circuits; Monolithic integrated circuits; Power dissipation; Ring oscillators; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902517

Filename

902517