Title :
An NMOS voltage reference
Author :
Blauschild, R. ; Tucci, P. ; Muller, Rudolf ; Meyer, Roland
Author_Institution :
Signetics Corp., Sunnyvale, CA, USA
Abstract :
An NMOS temperature-stable voltage reference, affording - in breadboard results - a temperature drift of less than 6 PPM/°C, will be described. Calculations show that less than 2 PPM/°C can be achieved with proper choice of device geometries.
Keywords :
Circuits; Difference equations; Implants; Ion implantation; Logic design; MOS devices; MOSFETs; Temperature dependence; Temperature sensors; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155841
