Title :
High-speed switching performance and buck converter operation of 4H-SiC diodes
Author :
Trivedi, M. ; Shenai, K. ; Neudeck, P.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper presents a detailed study of the transient performance of low-voltage and high-voltage Si and 4H-SiC P-i-N and Schottky diodes. It is shown that SiC P-i-N diodes do not offer any tangible performance improvement over Si P-i-N diodes in the low-voltage range, but have very strong potential for use in high-voltage power electronics applications operating at high switching frequency and high temperature. Experimental results of the performance of the device in hard-switching and zero voltage switching DC-DC buck converter are also reported
Keywords :
DC-DC power convertors; Schottky diodes; p-i-n diodes; power semiconductor switches; silicon compounds; wide band gap semiconductors; 4H-SiC; DC-DC buck converter; P-i-N diodes; Schottky diodes; SiC; hard-switching; high-speed switching; high-voltage diodes; low-voltage diodes; transient performance; zero voltage switching; Buck converters; Circuit testing; P-i-n diodes; Rectifiers; Schottky diodes; Silicon carbide; Stress; Switching frequency; Temperature; Voltage;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902521
