High-speed switching performance and buck converter operation of 4H-SiC diodes

Author

Trivedi, M. ; Shenai, K. ; Neudeck, P.G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

fYear

2000

fDate

2000

Firstpage

69

Lastpage

78

Abstract

This paper presents a detailed study of the transient performance of low-voltage and high-voltage Si and 4H-SiC P-i-N and Schottky diodes. It is shown that SiC P-i-N diodes do not offer any tangible performance improvement over Si P-i-N diodes in the low-voltage range, but have very strong potential for use in high-voltage power electronics applications operating at high switching frequency and high temperature. Experimental results of the performance of the device in hard-switching and zero voltage switching DC-DC buck converter are also reported

Keywords

DC-DC power convertors; Schottky diodes; p-i-n diodes; power semiconductor switches; silicon compounds; wide band gap semiconductors; 4H-SiC; DC-DC buck converter; P-i-N diodes; Schottky diodes; SiC; hard-switching; high-speed switching; high-voltage diodes; low-voltage diodes; transient performance; zero voltage switching; Buck converters; Circuit testing; P-i-n diodes; Rectifiers; Schottky diodes; Silicon carbide; Stress; Switching frequency; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902521

Filename

902521