Title :
Determination of small-signal parameters of GaN-based HEMTs
Author :
Chigaeva, E. ; Walthes, W. ; Wiegner, D. ; Grözing, M. ; Schaich, F. ; Wieser, N. ; Berroth, M. ; Breitschädel, O. ; Kley, L. ; Kuhn, B. ; Scholz, F. ; Schweizer, H. ; Ambacher, O. ; Hilsenbeck, J.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany
Abstract :
The small-signal equivalent circuit of AlGaN/GaN HEMT is discussed It is shown that an extremely high gate voltage has to be applied to correctly determine series resistances. Effects appearing at high forward gate voltages are discussed. Good agreement between measured and simulated data has been achieved
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; equivalent circuit; series resistance; small-signal parameters; Aluminum gallium nitride; Equivalent circuits; FETs; Fabrication; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Optical fiber communication; Voltage;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902526
