DocumentCode
2865877
Title
Determination of small-signal parameters of GaN-based HEMTs
Author
Chigaeva, E. ; Walthes, W. ; Wiegner, D. ; Grözing, M. ; Schaich, F. ; Wieser, N. ; Berroth, M. ; Breitschädel, O. ; Kley, L. ; Kuhn, B. ; Scholz, F. ; Schweizer, H. ; Ambacher, O. ; Hilsenbeck, J.
Author_Institution
Inst. of Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany
fYear
2000
fDate
2000
Firstpage
115
Lastpage
122
Abstract
The small-signal equivalent circuit of AlGaN/GaN HEMT is discussed It is shown that an extremely high gate voltage has to be applied to correctly determine series resistances. Effects appearing at high forward gate voltages are discussed. Good agreement between measured and simulated data has been achieved
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; equivalent circuit; series resistance; small-signal parameters; Aluminum gallium nitride; Equivalent circuits; FETs; Fabrication; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Optical fiber communication; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location
Ithaca, NY
ISSN
1529-3068
Print_ISBN
0-7803-6381-7
Type
conf
DOI
10.1109/CORNEL.2000.902526
Filename
902526
Link To Document