Title :
A 16 W, 40% efficient, continuous wave, 4H SiC, L-band SIT
Author :
Clarke, R.C. ; Morse, A.W. ; Esker, P. ; Curtice, W.R.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Baltimore, MD, USA
Abstract :
Wide bandgap transistor developments described in this work include CW SiC SITs with output powers at L-band of 16 W/cm, and increased breakdown voltage SITs having a 400 V blocking voltage and 35 W/cm output power. Progress with pulse devices includes a 800 W UHF SIT and a 900 W L-band SIT
Keywords :
UHF field effect transistors; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 16 W; 40 percent; 400 V; 4H-SiC; 800 W; 900 W; L-band SIT; SiC; UHF SIT; blocking voltage; breakdown voltage; continuous wave device; output power; pulse device; wide bandgap transistor; Argon; Breakdown voltage; Fabrication; L-band; Microwave devices; Packaging; Power generation; Silicon carbide; Thermal conductivity; Transmitters;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902530
