Title :
Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO2
Author :
Perez, I. ; Elam, J. ; George, S. ; Groner, M. ; Torvik, J.T. ; Van Zeghbroeck, B.
Author_Institution :
Colorado Univ., Boulder, CO, USA
Abstract :
We report for the first time the use of Atomic Layer Deposition (ALD) to make a carbon-free SiO2 dielectric gate on 4H-SiC, yielding high-quality MOS characteristics. Depositing ALD oxides on SiC would eliminate the problem of carbon related interface charges that adversely affect the electron mobility in the n-channel of MOS SiC transistors
Keywords :
MOS capacitors; electron mobility; semiconductor materials; silicon compounds; vapour deposited coatings; 4H-SiC MOS capacitor; SiC-SiO2; SiO2 dielectric gate; atomic layer deposition; electron mobility; interface charge; n-channel MOS transistor; Atomic layer deposition; Capacitance-voltage characteristics; Electron mobility; Fabrication; MOS capacitors; Nickel; Silicon carbide; Sputtering; Substrates; Temperature;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902531
