Title :
Microwave performance of power MOSFETs on SOI substrates
Author :
McShane, E. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper presents the first results of lateral SOI power MOSFETs for RF applications in a modified 1.2-μm CMOS technology. Fabricated 30-V devices achieved an fT of 6.9 GHz and an fmax of 10.1 GHz. Model parameters were extracted, and a comparison of the measured and modeled results demonstrates a reasonable match. A Class A RF amplifier was also constructed and measured. It yielded an efficiency of 25% (identical to a similarly rated bulk LDMOSFET) with a maximum power output of 0.115 W
Keywords :
microwave field effect transistors; microwave power transistors; power MOSFET; silicon-on-insulator; 0.115 W; 1.2 micron; 10.1 GHz; 25 percent; 30 V; 6.9 GHz; CMOS technology; SOI substrate; class A RF amplifier; lateral power MOSFET; microwave characteristics; parameter extraction; CMOS technology; High power amplifiers; MOSFETs; Microwave amplifiers; Microwave devices; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Temperature; Thermal stresses;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902532
