Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation

Author

Yuan, Luo ; Melloch, Michael R. ; Cooper, James A. ; Webb, Kevin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2000

fDate

2000

Firstpage

158

Lastpage

167

Abstract

A large-signal simulation study has been performed on 4H-SiC IMPATT oscillators. Peak power capability of more than 1 kilowatt, with greater than 15% power efficiency, was predicted for both Ka-band and X-band SiC IMPATT diodes. Prototype devices with single-drift regions and hi-lo doping profiles have been designed and fabricated. The first working SiC IMPATT oscillator has been demonstrated

Keywords

IMPATT oscillators; microwave diodes; microwave oscillators; millimetre wave diodes; millimetre wave oscillators; semiconductor materials; silicon compounds; 1 kW; 15 percent; Ka-band; SiC; X-band; hi-lo doping profile; high-power microwave generation; high-power millimeter-wave generation; large-signal simulation; power efficiency; silicon carbide IMPATT oscillator; single-drift region; Circuit simulation; Doping profiles; Immune system; Millimeter wave communication; Millimeter wave radar; Oscillators; P-i-n diodes; Radio frequency; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902533

Filename

902533