Title :
Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation
Author :
Yuan, Luo ; Melloch, Michael R. ; Cooper, James A. ; Webb, Kevin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A large-signal simulation study has been performed on 4H-SiC IMPATT oscillators. Peak power capability of more than 1 kilowatt, with greater than 15% power efficiency, was predicted for both Ka-band and X-band SiC IMPATT diodes. Prototype devices with single-drift regions and hi-lo doping profiles have been designed and fabricated. The first working SiC IMPATT oscillator has been demonstrated
Keywords :
IMPATT oscillators; microwave diodes; microwave oscillators; millimetre wave diodes; millimetre wave oscillators; semiconductor materials; silicon compounds; 1 kW; 15 percent; Ka-band; SiC; X-band; hi-lo doping profile; high-power microwave generation; high-power millimeter-wave generation; large-signal simulation; power efficiency; silicon carbide IMPATT oscillator; single-drift region; Circuit simulation; Doping profiles; Immune system; Millimeter wave communication; Millimeter wave radar; Oscillators; P-i-n diodes; Radio frequency; Silicon carbide; Voltage;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902533
