Title :
Low power GaAs digital ICs using Schottky diode-FET logic
Author :
Eden, R. ; Welch, Benjamin ; Zucca, R.
Author_Institution :
Rockwell International, Thousand Oaks, CA, USA
Abstract :
A logic circuit approach for GaAs ICs, which makes use of high speed GaAs Schottky barrier diodes for most of the logic functions, will be described. Low power depletion-mode GaAs FETs are used principally for logic inversion and gain.
Keywords :
Digital integrated circuits; FETs; Gallium arsenide; Logic circuits; Logic functions; Logic gates; MESFETs; Power dissipation; Schottky barriers; Schottky diodes;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155855
