Validation of an analytical large signal model for AlGaN/GaN HEMT´s on SiC substrates

Author

Green, Bruce M. ; Kim, Hyungtak ; Tilak, Vinayak ; Shealy, James R. ; Smart, Joseph A. ; Eastman, Lester F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2000

fDate

2000

Firstpage

237

Lastpage

241

Abstract

An analytical nonlinear model describing AlGaN/GaN HEMT´s grown on SiC substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with 16 GHz power sweep data show good agreement between the model predictions of a 3.3 W/mm power density (18% PAE) and the measurements for these devices

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; wide band gap semiconductors; 16 GHz; 18 percent; AlGaN-GaN; AlGaN/GaN HEMT; SiC; SiC substrate; analytical model; nonlinear large-signal characteristics; output conductance; power density; power-added efficiency; transconductance; Aluminum gallium nitride; Analytical models; Data mining; Density measurement; Gallium nitride; HEMTs; Predictive models; Signal analysis; Silicon carbide; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902544

Filename

902544