Title :
Power limits of polarization-induced AlGaN/GaN HEMT´s
Author :
Eastman, Lester F. ; Green, Bruce ; Smart, Joseph ; Tilak, Vinayak ; Chumbes, Eduardo ; Kim, Hyungtak ; Prunty, Thomas ; Weimann, Nils ; Dimitrov, Roman ; Ambacher, Oliver ; Schaff, William J. ; Shealy, J. Richard
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The present and predicted limits on microwave power performance of undoped AlGaN/GaN HEMTs are presented, based on measured frequency response and drain-source breakdown voltage, both as functions of gate length. The spontaneous and piezoelectric polarization that induce the 2DEG in these HEMTs are covered. Process methods, including Si3 N4 passivation are included. Thermal simulation results are shown for heat dissipation that limits channel temperature to 300°C. Microwave cw power density limits of 12.5 W/mm at 10 GHz are predicted for class A operation on thick SiC substrates
Keywords :
III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; microwave field effect transistors; microwave power transistors; passivation; piezoelectric semiconductors; power HEMT; semiconductor device breakdown; two-dimensional electron gas; wide band gap semiconductors; 10 GHz; 2DEG; 300 C; AlGaN-GaN; AlGaN/GaN HEMT; Si3N4; Si3N4 passivation; SiC; SiC substrate; channel temperature; class A operation; drain-source breakdown voltage; frequency response; heat dissipation; microwave power transistor; piezoelectric polarization; spontaneous polarization; thermal simulation; Aluminum gallium nitride; Electromagnetic heating; Frequency measurement; Gallium nitride; HEMTs; Length measurement; MODFETs; Microwave measurements; Piezoelectric polarization; Power measurement;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902545
