DocumentCode
2866151
Title
Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates
Author
Vescan, A. ; Dietrich, R. ; Wieszt, A. ; Lee, J.S. ; Schurr, A. ; Leier, H. ; Daumiller, I. ; Käb, N. ; Kohn, E.
Author_Institution
Res. & Technol., DaimlerChrysler AG, Ulm, Germany
fYear
2000
fDate
2000
Firstpage
247
Lastpage
256
Abstract
In this paper we report on the fabrication and performance of AlGaN/GaN HFETs grown on sapphire and SiC substrates. Due to the excellent material properties record extrinsic transconductance and current values were achieved, with promising RF power performance. We discuss in detail the performance limitations of the fabricated devices with respect to thermal effect, degradation and current transients
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; wide band gap semiconductors; Al2O3; AlGaN-GaN; AlGaN/GaN HFET; RF power characteristics; SiC; SiC substrate; current transients; sapphire substrate; thermal effects; transconductance; Aluminum gallium nitride; Fabrication; Gallium nitride; HEMTs; MODFETs; Material properties; Radio frequency; Silicon carbide; Thermal degradation; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location
Ithaca, NY
ISSN
1529-3068
Print_ISBN
0-7803-6381-7
Type
conf
DOI
10.1109/CORNEL.2000.902546
Filename
902546
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