Title :
Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates
Author :
Vescan, A. ; Dietrich, R. ; Wieszt, A. ; Lee, J.S. ; Schurr, A. ; Leier, H. ; Daumiller, I. ; Käb, N. ; Kohn, E.
Author_Institution :
Res. & Technol., DaimlerChrysler AG, Ulm, Germany
Abstract :
In this paper we report on the fabrication and performance of AlGaN/GaN HFETs grown on sapphire and SiC substrates. Due to the excellent material properties record extrinsic transconductance and current values were achieved, with promising RF power performance. We discuss in detail the performance limitations of the fabricated devices with respect to thermal effect, degradation and current transients
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; wide band gap semiconductors; Al2O3; AlGaN-GaN; AlGaN/GaN HFET; RF power characteristics; SiC; SiC substrate; current transients; sapphire substrate; thermal effects; transconductance; Aluminum gallium nitride; Fabrication; Gallium nitride; HEMTs; MODFETs; Material properties; Radio frequency; Silicon carbide; Thermal degradation; Transconductance;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902546
