DocumentCode
2866164
Title
Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE.
Author
Chauvin, N. ; Michon, A. ; Sagnes, I. ; Patriarche, G. ; Beaudoin, G. ; Bremond, G. ; Bru-Chevallier, C. ; Saint-Girons, G.
Author_Institution
LPM, INSA-Lyon, Villeurbanne
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
InAs/InP(001) quantum dots emitting around 1.5 mum were grown by low-pressure metalorganic vapor phase epitaxy. We report here on the observation of exciton and biexciton microphotoluminescence from a single quantum dot.
Keywords
III-V semiconductors; MOCVD coatings; biexcitons; indium compounds; photoluminescence; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; MOVPE; biexcitons; low-pressure metalorganic vapor phase epitaxy; microphotoluminescence; semiconductor quantum dot; Epitaxial growth; Epitaxial layers; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627930
Filename
4627930
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