Title :
Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE.
Author :
Chauvin, N. ; Michon, A. ; Sagnes, I. ; Patriarche, G. ; Beaudoin, G. ; Bremond, G. ; Bru-Chevallier, C. ; Saint-Girons, G.
Author_Institution :
LPM, INSA-Lyon, Villeurbanne
Abstract :
InAs/InP(001) quantum dots emitting around 1.5 mum were grown by low-pressure metalorganic vapor phase epitaxy. We report here on the observation of exciton and biexciton microphotoluminescence from a single quantum dot.
Keywords :
III-V semiconductors; MOCVD coatings; biexcitons; indium compounds; photoluminescence; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; MOVPE; biexcitons; low-pressure metalorganic vapor phase epitaxy; microphotoluminescence; semiconductor quantum dot; Epitaxial growth; Epitaxial layers; Quantum dots;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627930
