Low frequency noise in GaN-based transistors

Low-frequency noise in GaN/AlGaN heterostructure field effect transistors (HFETs) Metal-Oxide-Semiconductor HFETs (MOS-HFETs), metal semiconductor field effect transistors (MESFETs) and metal oxide semiconductor field effect transistors (MOSFETs) was measured at room and elevated temperatures as function of gate and drain voltages. Local levels with a large activation energy E_a~0.8-1.0 eV have been observed in the measurement results. The noise might come from thin (30 nm) AlGaN barrier layer. The estimates of the level parameters based on this assumption resulted in reasonable values of capture cross section σ_n=(10^-12-10^-13) cm²