• DocumentCode
    2866182
  • Title

    Temperature dependence of quantum dot homogeneous linewidth

  • Author

    Berry, J.J. ; Stevens, Martin J. ; Mirin, R.P. ; Silverman, K.L.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Boulder, CO
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements using a high-resolution spectral hole burning technique are performed on quantum dots in a semiconductor waveguide.
  • Keywords
    III-V semiconductors; gallium arsenide; ground states; indium compounds; optical hole burning; optical materials; optical waveguides; semiconductor device measurement; semiconductor quantum dots; thermo-optical devices; InGaAs-GaAs; ground state; high-resolution spectral hole burning technique; quantum dot homogeneous linewidth; semiconductor waveguide; temperature dependence; Frequency; Laser excitation; Optical waveguides; Performance evaluation; Pollution measurement; Probes; Quantum dots; Temperature dependence; Temperature distribution; Time measurement; (250.0250); (300.6250); (300.6470);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4627931
  • Filename
    4627931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866182