Title :
Diamond power FET concept
Author :
Aleksov, A. ; Denisenko, A. ; Kab, N. ; Ebert, W. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices and Circuits, Ulm Univ., Germany
Abstract :
In this paper a novel concept for diamond power FETs is presented. This concept is based on a δ-doped active channel using homoepitaxial CVD-layers on 100-oriented single crystals. The channel is controlled by a recessed sub-μm pn-junction gate. Based on technological building blocks developed previously, the structure has been simulated and 13 W/mm RF power are predicted. First fabricated FETs show that the concept is feasible
Keywords :
CVD coatings; diamond; doping profiles; elemental semiconductors; power field effect transistors; semiconductor epitaxial layers; wide band gap semiconductors; δ-doped active channel; C; RF power; diamond power FET; homoepitaxial CVD layer; recessed p-n junction gate; single crystal; Boron; Circuits; Crystals; Dielectric losses; Doping; Electron devices; FETs; Hydrogen; Nitrogen; Thermal conductivity;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902548
