Title :
A 7-18GHz amplifier using GaAs FETs
Author_Institution :
Avantek, Inc., Santa Clara, CA, USA
Abstract :
The design of a complete 7-18GHz FET amplifier using a 0.5 μ FET will be discussed. Features include a limiter in the first stage followed by a six gain module affording a gain of 28dB.
Keywords :
Bandwidth; Broadband amplifiers; Circuit synthesis; Couplers; FETs; Frequency conversion; Gallium arsenide; Loss measurement; Pulse amplifiers; Temperature;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155869
