DocumentCode :
2866230
Title :
X-band MIC GaAs power FET amplifier module
Author :
Hua Tserng ; Macksey, H. ; Doerbeck, F. ; Wisseman, W.
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
122
Lastpage :
123
Abstract :
The design and fabrication of a 9-10GHz MIC three-stage GaAs FET amplifier module will be described. An output power of 1.6W with 20dB gain and 28% efficiency has been achieved.
Keywords :
Bandwidth; Driver circuits; FETs; Frequency; Gallium arsenide; Microstrip; Microwave integrated circuits; Power amplifiers; Power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155870
Filename :
1155870
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2866230
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