50–100 MHz, 8x step-up DC-DC converters in 130nm 1.2V digital CMOS

Author

Xue, Lin ; Dougherty, Christopher M. ; Bashirullah, Rizwan

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

fYear

2011

fDate

6-11 March 2011

Firstpage

892

Lastpage

896

Abstract

This paper reports the implementation of high voltage step-up converters in standard 130nm 1.2V CMOS technology. Two hybrid boost converters have been fabricated and are compared, each of which are enabled by the development of enhanced high voltage devices for the standard process: Schottky diodes and stacked NMOS switches. Each device can sustain blocking voltages near 10V or greater in the 1.2V process. The two hybrid boost converters both operate at 50-100MHz switching frequency with 1.2 to 10V conversion. The switched inductor/capacitor hybrid converter delivers 26mW maximum power and achieves 42% peak efficiency at 7V output, while the switched inductor/flyback converter delivers 66mW maximum power and achieves 57% peak efficiency at 7V output.

Keywords

CMOS digital integrated circuits; DC-DC power convertors; Schottky diodes; VHF circuits; semiconductor switches; DC-DC converters; Schottky diodes; digital CMOS technology; flyback converter; frequency 50 MHz to 100 MHz; high voltage step-up converters; hybrid boost converters; size 130 nm; stacked NMOS switches; switched inductor/capacitor; switching frequency; voltage 1.2 V; voltage devices; Capacitors; Converters; Inductors; MOS devices; Schottky diodes; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE

Conference_Location

Fort Worth, TX

ISSN

1048-2334

Print_ISBN

978-1-4244-8084-5

Type

conf

DOI

10.1109/APEC.2011.5744700

Filename

5744700