DocumentCode
2866243
Title
A 1-W 2-6GHz amplifier utilizing a discretely packaged GaAs FET
Author
Wade, P.
Author_Institution
Microwave Semiconductor Corp., Somerset, NJ, USA
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
120
Lastpage
121
Abstract
A 100% bandwidth GaAs FET power amplifier utilizing a discretely packaged GaAs FET will be presented. The design of the package - hermetic stripline - the microstrip circuit, microwave performance characteristics and high-power impedances will be covered.
Keywords
Bandwidth; Broadband amplifiers; Chebyshev approximation; Circuits; FETs; Gallium arsenide; Impedance; Metallization; Scattering parameters; Semiconductor device packaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155871
Filename
1155871
Link To Document