High efficiency and low loss fully integrated passive waveguide mode converters

Author

Holmes, B.M. ; Hutchings, D.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Fully integrated GaAs/AlGaAs passive waveguide polarisation converters realised through the use of reactive ion etch lag (RIE Lag) is reported. The devices characterised at lambda=0.9 mum produce TE-TM conversion efficiencies in excess of 96%.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical fabrication; optical materials; optical planar waveguides; optical waveguide components; sputter etching; GaAs-AlGaAs; TE-TM conversion efficiency; integrated passive waveguide mode converters; low-loss waveguide polarisation converters; planar waveguide; reactive ion etch lag; wavelength 0.9 mum; Dry etching; Insertion loss; Integrated optics; Isolators; Optical devices; Optical polarization; Optical waveguides; Particle beam optics; Planar waveguides; Wet etching; (230.3120) Integrated optics devices; (230.3240) Isolators; (230.5440) Polarization-sensitive devices; (230.7390) Waveguides, planar;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4627937

Filename

4627937