DocumentCode :
2866511
Title :
A 50MHz–16GHz low distortion SOI voltage controlled attenuator IC with IIP3 > +38dBm and control range of > 25dB
Author :
Franzwa, Ed ; Ellis, Alan ; Nelson, Brad ; Granger-Jones, Marcus ; Valenti, Greg
Author_Institution :
RFMD, San Jose, CA, 95134, USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper discusses a 50MHz–16GHz wideband, low distortion, voltage controlled attenuator (VCA) on silicon on insulator (SOI) CMOS technology. The VCA design is based on passive FET absorptive attenuator structures but uses stacked FET techniques to dramatically improve the distortion characteristics and signal handling capability. It leverages a surface mount compatible flip chip IC in an over molded laminate package to minimize parasitics. The VCA achieves >25dB attenuation range, IIP3 of > +38dBm and IP1dB > 25dBm up to 16GHz. The laminate and flip chip combination maintains a return loss of better than −8dB over the entire frequency and attenuation range. The insertion loss at 16GHz is 5.0dB at minimum attenuation.
Keywords :
Attenuation; Attenuators; FETs; Flip chip; Frequency control; Temperature control; Voltage control; Attenuator; CMOS attenuator; IP3; SOI; VCA; VVA; broadband attenuator; linear attenuator; linear-in-dB; stacked; voltage controlled attenuator; voltage variable attenuator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259585
Filename :
6259585
Link To Document :
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