DocumentCode
2866575
Title
RTD-based THz-MIC by Film-Diode technology
Author
Cojocari, Oleg ; Sydlo, Cezary ; Feiginov, Michael ; Meissner, Peter
Author_Institution
ACST Advanced Compound-Semiconductor Technologies GmbH, 64283 Darmstadt, Germany
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This work aims at development of extremely compact and low-cost THz sources. Resonant-tunneling diode (RTD) is monolithically integrated with planar resonator and Vivaldi antenna on transferred membrane-substrate by Film-Diode (FD) process. The highest obtained oscillation-frequency is 1111GHz. This is the highest frequency RTD-based oscillator reported so far, and the highest-frequency Terahertz Monolithic Integrated Circuit (THz-MIC) realized so far by FD-technology.
Keywords
Antennas; Metallization; Ohmic contacts; Optimization; Oscillators; Resonant frequency; Substrates; Integrated Circuit Technology; MMICs; Resonant tunneling devices; Submillimeter wave integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259589
Filename
6259589
Link To Document