• DocumentCode
    2866626
  • Title

    A 10-Gbps In0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

  • Author

    Liao, Yu-Sheng ; Lin, Gong-Ru ; Kuo, Hao-Chung ; Feng, Kai-Ming ; Feng, Milton

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6 fA/mum2, switching response of 41 ps, bit-error-rate of 10-12, and sensitivity of -19 dBm are reported.
  • Keywords
    III-V semiconductors; buffer layers; dark conductivity; gallium arsenide; gallium compounds; indium compounds; optical receivers; p-i-n photodiodes; In0.53Ga0.47As-InxGa1-xP-GaAs; PINPD; bit-error-rate; metamorphic buffer layer; optical receiver; p-i-n photodiode receiver; time 41 ps; ultra-low dark current; Dark current; Frequency; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical receivers; PIN photodiodes; Probes; Substrates; (040.5160) Photodetectors; (060.2380) Fiber optics sources and detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4627958
  • Filename
    4627958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866626